Analysis of reconfigurable tunnel field effect transistor for improved current characteristics

This paper presents different techniques to improve the current performance of reconfigurable tunnel field effect transistor (RTFET). Homojunction RTFETs are considered in this paper. The current performance of RTFETs designed using different semiconductor material and dielectric material is compared in this paper. Proper selection of gate metal work function plays important role in the RTFET design to get symmetric current behavior. The selection of apt gate work function for different homojunction RTFETs is given in this paper. Technology computer-aided design (TCAD) simulations are used to analyze the device performance.