Reliability study of hybrid wide drain poly-Si FinTFT

In this work, the hot carrier reliability of polycrystalline silicon (poly-Si) fin-like TFT (FinTFT) is investigated. The changes in transconductance (gm), threshold voltage (Vth) and on resistance (Ron) are measured and analyzed. Device with hybrid wide drain design shows minor degradation at the VG = VD stress condition.