Modeling and simulation of switching characteristics of half-bridge SiC power module in single leg T-type converter for EMI prediction

In this paper, the switching characteristics of a 1200 V/300 A SiC half-bridge module in a T-type converter is modeled and simulated. Firstly, all current loops of the two T-type configurations for double pulse testing are investigated. The dc bus bar layout is proposed to minimize the stray inductance with four layers laminated structure. To reflect the actual switching characteristics, the parasitic inductance of the DC bus bar and major parasitic elements of the power module, such as junction capacitance, terminal to substrate capacitance, and terminal to terminal inductance are extracted with ANSYS Q3D. Finally, the experiment is carried out to verify the modeling of DC bus bar and power module, and to predict the switching characteristics to investigate the potential EMI.