Conducted immunity of Bandgap in SOI technology after electrical stress aging

Analog circuits such as Bandgap reference circuits are crucial for electrical system operational stability. But they are very sensitive to electromagnetic interferences (EMI) which could induce voltage offset on their outputs. In harsh environments, the aging of this component can be accelerated and could lead to the changes of the effects to EMI. This paper proposes an original study about the drift of the susceptibility level of a Bandgap circuit in SOI technology submitted to electrical stresses. The measurement results show decreasing susceptibility after electrical accelerated aging.