Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique

This paper presents the characterizations of SiC Super-Junction SBD, which can break the theoretical one dimensional limit of the SiC unipolar devices. The Super-Junction structure is implemented by trench and implantation technique. The mesa width of Super-Junction device is a key structure parameter, therefore its impacts on device forward and reverse characteristics are analyzed by measurement and numeric simulations. The temperature dependence of the specific on-resistance (R_{sp, on}) of this device is measured and compared with that of a conventional SiC SBD. SiC Super-Junction SBD shows a slower increase in R_{sp, on} with temperature. The switching capability of SiC Super-Junction device is demonstrated for the first time by double pulse tester.