Experimental characterization of the fully integrated Si-GaN cascoded FET

In this paper, fabrication process of the fully integrated Si-GaN cascoded field effect transistor is presented first. Device performance of the individual Si MOSFET and AlGaN/GaN MIS-HEMT, which are fabricated along with the Si-GaN cascoded FET, are then characterized. Finally, the device performance of the fully integrated cascoded FET is characterized in detail, including the transconductance compression at high V_GS and high V_DS, the reverse conduction, the power figure-of-merit (FOM), and the high-temperature characteristics. It is shown that the Si-GaN monolithic cascoded FET is a promising candidate for high performance power switching applications.