Low injection anode as positive spiral improvement for 650V RC-IGBT

A novel Reverse Conducting IGBT (RC-IGBT) with a low impurity concentration p
^-
anode is proposed. To improve an embedded anti-parallel diode characteristic, a low hole injection anode structure is effective. The common ohmic contact for both IGBT and diode parts is the strong regulation for the RC-IGBT from the wafer process point of view. One of the solution is utilizing the different metallization independently for IGBT and diode portions. This diode oriented approach has finally played a preferable roll even for IGBT characteristics as if in the positive spiral steps.