Self terminating lateral-vertical hybrid super-junction FET that breaks RDS.A — Charge balance trade-off window

In this paper, we present a novel lateral/vertical hybrid super-junction structure that breaks the fundamental trade-off between the _Rds.A and Charge imbalance window for a Super-Junction MOSFET. This device structure can continue the scaling of Superjunction MOSFET well below 10mΩ.cm² with good manufacturability window. Methods of scaling the Blocking Voltage and R_ds.A are also discussed for this hybrid device structure. This device structure also offers an optional drain electrode on the top surface, if needed for co-packaging with other chips.