A novel SCE independent threshold voltage hybrid extrapolation extraction method for nano MOSFETs

Threshold voltage (V
_TH
) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V
_TH
value of the device is described and evaluated by several estimation techniques. However these assessed values of V
_TH
diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. A new approach to extract the real value of V
_TH
of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE independent V
_TH
extraction method named Hybrid Extrapolation V
_TH
Extraction Method (HEEM) is elaborated, modeled and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2-D TCAD simulation and confirmed analytically at various technology nodes.