Transient response of HgCdTe Auger-suppressed magnetoconcentration photoconductors

In this work we analyze the transient response of a HgCdTe magnetoconcentration photoconductor. We utilized the set of general equations for modeling of semiconductor devices in crossed electric and magnetic fields for the case of large carrier nonequilibrium. The device was illuminated by Heaviside-type infrared radiation with an intensity low enough to cause only small departures from the stationary state. We obtained a single parabolic differential equation for minority carrier concentration distribution in the one-dimensional case. Shockley-Read-Hall-limited boundary conditions were defined for the current densities on the defector front and the back side. Larger quenching of the carrier concentration within the photodetector active area improves the generation-recombination signal-to-noise ratio and simultaneously shortens the response time. However, stronger fields intensify the effects of carrier heating. There is an optimum balance between the field intensities and the beneficial effects of Auger suppression and for this the maximum specific detectivity-bandwidth product is obtained.