Temperature estimation of high-electron mobility transistors AlGaN/GaN

In this paper, a method to estimate the junction temperature of high-electron mobility transistors (HEMTs) is proposed. This technique based on electrical measurements with IV pulsed setup take into account the dissipated power and the base plate temperature of the component. The average temperature of the transistor could be evaluated in a 2D plan with dissipated power and base plate temperature and a thermal resistance is evaluated in this 2D plan.