Current perpendicular-to-plane GMR for magnetoelectronic RAM

Different avenues are being explored to realize non-volatile high density magnetoelectronic memory. Our work has focused on the applicability of the current perpendicular-to-plane configuration of magnetic multilayers showing giant magnetoresistance (CPP-GMR). Successful realization relies on overcoming several technological hurdles that include understanding the complicated transport characteristics and micromagnetic of the multilayer system, device fabrication, process integration to Si electronics, and the memory operating mode and architecture. In this work we present our results to date in our evolving approach to constructing a functional memory.