Magnetic tunneling junction devices for non-volatile random access memory

Recently there has been renewed interest in magnetic random access memory (MRAM) because of the development of highly magnctoresistive thin film structures. namely giant magnetoresistance (GMR), and the related spin-valve sandwich in metallic multilayered structures, and magnetic Nnnel junction (MTJ) structures. In this talk we discuss recent progress in MTJ materials and physics and their application to MRAM.