Quantum dot gate non-volatile memory as single level cell (SLC), multi-level cell (MLC) and triple level cell (TLC)

This paper presents the application of quantum dot gate non-volatile memory (QDNVM) for single-level, multi-level and triple level memory cell. The charge accumulation in the gate region varies the threshold voltage of QDNVM which can be controlled by the application of external gate pulse. More pulse helps to tunnel more charge carriers form the inversion channel to the Quantum dot (QD) layer in the gate region of the QDNVM. The varying stored charge in the QD layer of the QDNVM, varies the threshold voltage of the device. By controlling the applied gate voltage pulse, the QDNVM can be used for single level cell (SLC), multi-level cell (MLC) and triple level Cell (TLC). A simplified circuit model using VHDL is developed for QDNVM. This work will highlight future memory integration using QDNVM.