Investigation of Au/ZnO/Si MIS structures by capacitance-voltage characteristics method

This work is devoted to theoretical and experimental investigation of the metal-insulator-semiconductor structures on the basis of ZnO/Si heterojunction. ZnO films were grown by pyrolytic decomposition method at different annealing conditions. The electrical properties of the structure were studied by the method of high-frequency capacitance-voltage characteristics. The structure and morphology of the ZnO layers were studied by scanning electron microscopy.