A new repair scheme for TSV-based 3D memory using base die repair cells

In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.