Dual material gate dopingless InAs TFET for low power applications

In this paper, we have demonstrated the application of Dual-Material-Gate (DMG) concept on InAs based Dopingless double gate TFET (DLDGTFET). Here, we have optimized the Ion, Ioff and SSavg to achieve a better device performance using DMG on InAs DLDGTFET. The desired performance can be obtained from DMG DLDLTFET by choosing appropriate work functions of the gates on source and drain side (Tunnel and Auxiliary gates). The IOFF is reduced by four orders of magnitude and a boost of almost four orders in ION /IOFF is achieved in our In As DMG DLDGTFET device compared to the conventional single material gate (SMG) TFET. An impressive SSavg of 12.66 mV/dec is achieved in DMG DLDGTFET. To prove the suitability of our device for low power application, device simulation has been carried out at VDS = 0.2V and VGS = 0.5V.