Impact of TFET reverse currents into circuit operation: A case study

Tunnel FET transistors (TFETs) are one of the most promising candidates to replace CMOS transistors for future integrated circuits. However TFET-based circuit design can exhibit significant limitations due to their reverse conduction currents caused by the direct bias of the intrinsic diode of these transistors. In this paper we analyze in depth this issue through the design of charge pump (DC-DC step up converters) circuits for energy harvesting applications. The proposed solution mitigates the impact of reverse conduction currents and, thus, improves power conversion efficiencies (PCE) compared to previous designs.