Growth and characterization of GeSn alloys using RF sputtering

Thin film of GeSn alloy was deposited on the glass and Si-substrates (100) both by physical vapor deposition (RF/DC magnetron sputtering) technique. The morphological, structural, and optical properties of the layers were investigated with transmission spectrum and field emission scanning electron microscopy (FESEM). The result shows that the direct bandgap behavior increases in GeSn alloys.