Restraining Strategy of the Stone–Wales Defect Effect on Graphene Nanoribbon MOSFETs

In this letter, armchair graphene nanoribbon (aGNR) metal-oxide-semiconductor field effect transistors with stone-wales (SW) defects are investigated by the first-principles simulation and nonequilibrium Green's function method. The on-state currents of the devices are found to be significantly reduced by the defects, leading to obvious deviations in GNR technology. Therefore, we propose a restraining strategy using foreign decorations to enhance the local conductivities. The most stable decoration positions for atoms (such as F, N, and B) are found by searching the lowest energy point in the SW regions. After the decorations, more energy states can participate in the conductions, and the state localizations are also alleviated. The simulation results reveal that the decorations can remarkably restrain the SW defect effects in GNR transport and generate more than tenfold ON-state current improvements.