A Memristor Model with a Modified Window Function and Activation Thresholds

In this research a new nonlinear dopant drift memristor model with a modified window function and activation thresholds is proposed. This model is appropriate for different types of the memristor voltage. For this purpose, a combination of a modified Biolek window function and Joglekar window function with a voltage-dependent exponent is used. The new memristor model is based on the Biolek model, the Joglekar model and the Generalized Boundary Condition Memristor (GBCM) model. The boundary effects are represented using a switch-based algorithm similar to those used in the GBCM model. As in the GBCM model, in the memristor model proposed here activation thresholds are applied. It has also an improved property for changing the ionic dopant drift nonlinearity extent in accordance with the memristor voltage. The proposed model could realistically represent the nonlinear dopant drift phenomenon. The offered relationship between the integer exponent in the modified window function and the memristor voltage is adjusted using a comparison with the standard Pickett model and with experimental data as well. The operating ability of the model proposed here is tested and successfully confirmed by a simulation in a memristor-based electronic device.