Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics

Summary form only given. Previous single-wavelength pump-probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy (He-plasma-grown InGaAsP) showed that this unique growth method produces picosecond, and, when combined with beryllium doping, subpicosecond conduction-band electron lifetimes, while maintaining good crystalline quality and a sharp band-edge. Dual-wavelength pump-probe results presented here allow a more detailed understanding of carrier dynamics just below the band-edge.