Rescuing memristor-based computing with non-linear resistance levels

Emerging memristor devices like metal oxide resistive switching random access memory (RRAM) and memristor crossbar have shown great potential in computing matrix-vector multiplication. However, due to the nonlinear distribution of resistance levels in memristor devices, the state-of-the-art multi-bit cell cannot accomplish the multi-bit computing task accurately. In this paper, we propose fault-tolerant schemes to rescue memristor-based computation with nonlinear resistance levels. We classify the resistance level distributions in memristor devices into three types, and the corresponding models are proposed to analyze the computation characteristics. We propose two theoretical conditions to determine if a memristor device can support multi-bit matrix computation. For the deviated linear model, the least squares method is used to reduce the computing error. When the resistance distribution obeys the proposed power model, a logarithmic operation circuit is used to decode the multiplication results and then accomplish the computing accurately. For the exponential model, since the device cannot complete typical matrix-vector multiplication from hardware level, we propose online and offline quantization methods to make the neural computing algorithms friendly to memristor device. Simulation results show that the root-mean-square error improves around 4% with the linear model and more than 99% with the power model. After quantization, the accuracy of ResNet-18 using memristor with exponential conductance levels can be improved to the same accuracy with ideal linear devices.