Closed loop analog active gate driver for fast switching and active damping of SiC MOSFET

SiC MOSFETs have the capability to handle large di/dt and dv/dt. This can be used to reduce the switching losses, and thereby increase efficiency of the converter. But, even moderate amount of layout parasitic inductance and capacitance can cause significant detrimental effects on reliability and EMI of the power device. Present paper proposes a di/dt feed back based, current controlled active gate driver mechanism. It allows the device to operate at desired di/dt as well as dv/dt level, even under moderate layout parasitic. Proposed gate driver also tries to exploit certain benefits offered by the layout parasitic to further reduce the switching losses. Active damping and over shoot arresting features of the proposed gate driver can ensure fast switching speeds without compromising on the reliability and EMI of the device.