Short circuit characterization of 3rd generation 10 kV SiC MOSFET

The short circuit performance of a 3
^rd
generation 10 kV/20 A SiC MOSFET with short channel is characterized in this paper. The platform consisting of a phase-leg configuration, which can test both hard switching fault (HSF) and fault under load (FUL) types of fault, is introduced in detail. A Si IGBT based solid state circuit breaker is developed for short circuit test. The short circuit protection having a response time of 1.5 μs is validated by the test platform. The short circuit characteristics for both the HSF and FUL types at 6 kV DC-link are presented and analyzed.