A design investigation of A 1 MVA SiC medium voltage three phase rectifier based on isolated dual active bridge

Dual-active-bridge (DAB) isolated three phase power factor correction (PFC) rectifier is attracting more and more attentions from academia and industry because of high power density, operational flexibility and premium performance, etc. This paper gives an overview to adapt the DAB PFC rectifier to medium voltage (MV) variable frequency drive (VFD) applications. First, a novel medium voltage drive (MVD) topology and its operating conditions are illustrated. Second, as the core component used in the DAB rectifier, a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) module rated at 12.5 kV, 375 A is proposed. The electrical, namely power loss, and thermal models are developed. Third, the control scheme of the grid-tied DAB rectifier is investigated. Analysis and simulations have been carried out to verify the proposal.