High frequency electroporation for biomedical applications using GaN gate injection transistors

Electroporation is a promising technique for cancer treatment consisting on applying a high electric field in order to induce selective cell death in those tumors with difficult treatment with alternative therapies. In order to achieve successful results, recent studies have discovered the need of high voltage and high frequency pulses to achieve the desired results without neurostimulation. This paper takes advantage of advances in GaN devices to build a high frequency generator for biomedical applications of electroporation. To achieve the desired performance, the latest generation of Gate Injection Transistors from Panasonic has been used in the experimental prototype.