Oxide-apertured photodetector integrated on VCSEL

Summary form only given. Monolithic integration of a laser and a monitor photodiode should result in lower packaging cost for most applications. For VCSELs, several schemes for monolithic integration have been reported. Especially, the intracavity resonant quantum well photodetector at 980 nm has been reported. The detection of the broadband spontaneous emission was reduced by locating the quantum well detector at an antinode of internal optical intensity. However, several tens of layers for detection should be grown additionally and the strong interaction of the intracavity resonant photodetector with the laser cavity introduced too much internal loss. In the paper, we demonstrate a simple oxide-apertured photodetector integrated on VCSEL which consists of just a few layers and uses the oxide apertures to remove the unwanted photocarriers from the spontaneous emission by nonradiative recombination at GaAs-oxide interfaces.