Multifunctional sensors based on Si < B, Ni > microcrystals for Harsh environment

A sensitive element of a magnetic field sensor with a resistive principle of action was proposed using microcrystals of silicon doped with boron to a concentration of 5 × 10¹⁸ cm^-3, which corresponds to the metal-insulator transition in silicon with a nickel layer formed on the crystal's surface, as well as the construction of a spin filter whose working capacity is due temperature mode below 100K. Sensitive elements of magnetic field - temperature sensors were created on the basis of microcrystals Si <;B, Ni>, working at cryogenic temperatures with a thermosensitive element for which temperature coefficient of resistance (TCR) = 20% × K^-1. Developed a sensitive elements of magnetic field - deformations sensors with a strain-sensitive element for which K = 165 at a temperature of 4.2 K.