Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM

A sol-gel-processed ZrO
₂
layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO
₂
film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO
₂
film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO
₂
/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 10
⁴
s without any significant degradation.