Potential benefits of graded channel dopingless transistor with source side dual-k spacer to upgrade analog/RF performance

In this paper, we aim to enhance the analog/RF performance of doping-less transistor using channel and spacer engineering. For this we use graded channel and dual-k spacer at the source side in double gate doping-less transistor (Dual-ks GC DL-DGFET). The analog parameters such as trans-conductance (G_m), output conductance (G_D), trans-conductance to drive current ratio (G_m/I_DS), early voltage (V_ea), intrinsic gain (A_v), total gate capacitance (C_GG), unity gain frequency (f_T) are compared for both conventional double gate conventional doping-less transistor and dual-k spacer at source side in double gate doping-less transistor. From the simulation results it is seen that there is improvement in G_m by ~25.91%, G_d by ~19.35%, Av0 by ~66.55%, C_gg by ~32.23%, f_T by ~9.54% in Dual-ks GC DL-DGFET as compared with conventional DL-DGFET. From above result we get a tremendous increment of G_m, A_v0, and slight increment in cut-off frequency f_T, in Dual-ks GC DL-DGFET as compared with conventional DL-DGFET.