Opportunity of CMOS FD-SOI for RF power amplifier

This paper reports the design of a 5GHz WiFi power amplifier (PA) taking advantage of the FD-SOI technology. Fabricated in a 28nm UTBB FD-SOI process with 1.8-V thick oxide devices, the PA output exhibits 23dBm Psat, 18dBm under low distortion with a 3.7V power supply. The core occupies less than 1mm
²
while integrating transformer and baluns.