MMIC 1 watt wideband power amplifier chip set using pHEMT technology for 20/30 GHz communication systems

High power MMIC wideband power amplifiers for 20/30 GHz systems have been developed using the 0.15 /spl mu/m InGaAs-AlGaAs-GaAs pHEMT technology. These two MMIC 1 watt power amplifiers were fabricated on a 4-mil GaAs wafer. Both MMIC power amplifiers showed 12/spl sim/15 dB of linear gain and 30 dBm of output power with more than 20% power-added efficiency over their wide operating frequency bands. Due to the wideband operation with excellent stability and high power, their application can be extended to any kind of 20/30 GHz communications system including the satellite communication, local multipoint distribution service, and so on.