MEMS fabrication of H-plane and E-plane loaded 400 GHz TWT amplifier

In this paper, we report UV-LIGA technique employed to fabricate a newly proposed H-plane and E-plane loaded metallic slow-wave structure for THz TWT amplifier. A negative tone photoresist KMPR is used as the mold material in the process. The fabrication process includes lithography, electroplating, mold removal and polishing. The process parameters were optimized according to the designed structure features. For the fabricated structure, the dimensional accuracy was within 2.5 μm and the RMS sidewall surface roughness was less than 75 nm.