Design of high-voltage and high-speed driver

A high-speed, high-voltage hybrid driver circuit has been designed and tested with 0.25-um silicon-on-insulator (SOI) laterally double-diffused metal oxide semiconductor (LDMOS) technology. The maximum output voltage of the designed driver is over 400 Vpp, and the withstand voltage is no more than 240 V. A novel circuit topology is used by dividing the driver circuit into three chips and applying different voltages to the substrates of the three chips so that the driver's maximum output voltage can achieve almost twice the withstand voltage. The bandwidth of the prototype driver is over 2 MHz. The hybrid driver is expected to be used for many industrial apparatuses.