High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin ${\text {AlO}}_{{X}}$ Interfacial Layer

The low mobility is a primary issue to prevent the practical application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this paper, we propose a route to resolve this issue by inserting an ultrathin AlO
_X
layer between the semiconductor film and the ferroelectric polymer film. A high mobility of 6.5 cm
²
V
^-1
· s
^-1
is achieved in the fabricated flexible Fe-OFET NVM, which also exhibits good memory performances with a large memory window of 17.2 V, a high memory on-off ratio up to 2 × 10
⁵
, reliable switching endurance property over 600 cycles, and stable retention capability with the memory on-off ratio larger than 10
²
over 10
⁴
s, at the low programming/erasing voltages of ±15 V.