The construction of coherence microscope for extreme ultraviolet mask defect inspection in synchrotron facility

The goal of this study is to construct a defect inspection microscope system for EUV multilayer mask, the beamline19A2 of National Synchrotron Radiation Research Center in Hsinchu was adopted as a light source. In a vacuum chamber, a set of EUV mask inspection system was designed and erected to detect defects on the mask. In addition, the coherent scattering microscopy was constructed to complete the erection and technology research and development of the EUV mask inspection system. This system will be used in the process applications by academia and industry to manufacture 22 nm node and below, thus providing detection of the fast and high-resolution mask or Line edge roughness (LER) in photoresist lithography quality.