Metal metalloid thin film for the application of field effect transistor

Metal Selenium thin film prepared as Metal Semiconductor Field Effect Thin film Transistor. Metal (Al/Cu) contact and metalloid (Se) channel used as a Field Effect Transistor on glass substrate by depositing the source, drain and top-gate Al/Cu contact. Metal gate is used to control flow of charge from source to drain. By varying the width of depletion layer channel has controlled using metal contact which modulates the thickness of conducting channel which causes flow of current between source and drain. The source and drain of the FET structure were defined by the metal layers Cu were sequentially deposited on the Se in the defined contact patterns by thermal evaporation technique at pressure of 10^-5 torr using vacuum coating unit. Its electrical and structural properties were characterized. This device is used to control the flow of current by changeable potential applied between gate and source (VGS), and free charge accumulation has induced at semiconductor interface.