Development of advanced AlGaN/GaN HEMTs large signal model

This paper presents the overview of reprehensive works on the large signal modeling (LSM) of AlGaN/GaN HEMTs very recently. First, the Angelov model, the classic empirical model of GaN HEMT, is improved with ambient-temperature dependent parasitic resistance model and scalable electrothermal model. This advanced Angelov model shows good results in predicting both of fundamental and harmonics at different ambient temperatures. Then, the emerging physical based modeling methods are studied. A scalable surface potential LSM which can also capable to predict harmonics is proposed for the first time. This model shows that the physical based model is ready for practical circuit design. Finally, to further reduce the empirical fitting parameters, a Quasi-Physical LSM model based on Zone Division method (QPZD model) is proposed. The QPZD model is validated by large signal performance up to 30GHz for different size devices.