Design of H-plane Magic-Tee junction in RSIW for V-band applications

This paper concerns the designing, considerations and analysis of H-plane Magic-Tee junction in rectangular substrate integrated waveguide technology using HFSS code. The proposed design unites the advantages such as low fabrication cost, low signal losses, planer profile, easily integrated with the other microwave devices and high performance in microwave application. The transmission coefficients S21 and S31 shows that the input power (3W) in a waveguide is equally split into -8dB power or combined -8dB power in needed manner by using presented SIW Tee junction. The divided E-fields are in same phase as the E-field at the input. The junction is optimized in V-band [40-75 GHz] for super high frequency of 55 GHz. Unlike other Tee junctions, the proposed SIW Tee junction is designed on modified epoxy substrate and the measured results demonstrate that the reflection coefficient dB (S11) is -43.2817 dB, reflection loss is 0.0008 dB, normalized impedance is 0.2411 and VSWR is 0.9004 at the frequency of 55 GHz. Moreover, the reflection coefficient and VSWR remains below the value of -12.5 dB and 1.2 respectively across the entire V-band, being very acceptable levels. Thus, through the study of results, proposed SIW Tee junction is very effective for signal transmission with low losses over entire V-band.