Threshold voltage variability induced by statistical parameters fluctuations in nanoscale bulk and SOI FinFETs

The main aim of this work is to investigate a simulation study of threshold voltage (V_th) variability induced by statistical parameters fluctuations in 14-nm bulk and silicon-on-insulator (SOI) FinFET structures. In present work, we have studied and explored the influence of various statistical variability sources such as random dopant fluctuations (RDFs), Oxide thickness variation (OTVs), and work function fluctuations (WFVs) on V_TH performance for both bulk and SOI FinFET structures. The simulation results suggest that the threshold voltage variability in SOI FinFET structure shows ~32% improvement as compared to bulk FinFET structure.