Modelling and comparison of Si-MOSFET and eGaN-HEMT for power converter applications using TCAD

Enhancement mode gallium nitrite HEMT (High Electron Mobility Transistor) devices are a new generation power switches in the field of power electronics. In this article, Si-MOSFET and eGaN-HEMT has been modelled and simulated. By improving the drain current and breakdown voltages of the eGaN HEMT over the Si MOSFETs, can be allow to operate at higher voltage ratings. In this article, eGaN-HEMTs structure is modelled and also simulated the electrical characteristics. The analysis was made in terms of I-V curve and also plotted the breakdown voltage of the devices. The breakdown voltage, on-state resistance and threshold voltage is analyzed. The modelling and characteristics of eGaN HEMT and Si MOSFET are performed using Sentaurus TCAD tool.