Physics based compact model of GaN HEMT with an efficient parameter extraction flow

In this paper, a physics based Virtual Source (VS) compact model and its parameter extraction flow is presented for GaN HEMTs targeting RF applications. While the intrinsic current and charge model are developed based on the previously reported Virtual Source model, the gate current model and parasitic element network are proposed based on our applications with a new efficient parameter extraction flow. Both direct current (DC) of drain and gate currents and RF measurements are conducted for model parameter extractions. The new extraction flow uses DC measurement of gate current to extract parasitic resistance elements before optimizing the intrinsic and parasitic element network using S-parameter measurement. This proposed flow provides reliable and accurate extraction for parasitic element values while achieving reasonable resolutions holistically with both DC and RF characteristics.