A radiation-hard waffle layout for BCD power MOSFET

In space, radiation may induce the degeneration of power IC, in which the large size power MOSFET is widely used. This paper presents the study and design of a new waffle layout for power MOSFET in 0.35μm BCD process. Co-60 based irradiation is carried out for packaged power MOSFETs with finger and waffle layout. The total ionizing dose radiation induces threshold shift in both devices, and leakage current only in N-channel power MOSFET with finger layout. The presented waffle layout is proved to be effective to control the leakage current with its edgeless structure, which enhances the TID-tolerance of power MOSFET a lot.