A 220–325 GHz low-loss micromachined waveguide power divider

A J-band (220-325 GHz) silicon micromachined waveguide power divider based on a tee-shape topology is presented. To characterise the power divider a test circuit was designed where one output path is connected using a low return loss multi-stepped bend and the other output path uses an on-chip matched waveguide load filled with an absorbing material. The power divider is fabricated using a micromachined waveguide technology employing a double H-plane split which results in low losses. Measured transmission and reflection coefficients are equal to -3.5 ± 0.4 dB at 231-330 GHz and between -10 dB and -20 dB at 220-320 GHz, respectively. A good agreement between the simulated and measured data was obtained by taking the microfabrication sidewall profile (undercut) into account in the simulations. To the best of our knowledge, this is the first time a low-loss micromachined power divider of this type is characterised within this frequency range.