Low-temperature plasma for high-power tuning

Low-temperature plasma as an enabling technology for tunable high-frequency devices is reviewed in this paper with particular attention given to high-power applications. As is well known, resistance of a bulk plasma region can be controlled by its electron number density. Furthermore, changing sheath thickness of a plasma structure also results in variable capacitance behavior. By properly employing these plasma attributes in different discharge regimes, it is possible to use plasma as a tunable high-frequency material particularly for high-power applications where other tuning technologies are suboptimal.