Performance measure of InAs Quantum dot enhanced GaP/InP/Ge multi junction Solar cell

The objective of this paper is to determine the performance improvement of multi-junction solar cell due to the addition of quantum dots. Initially, a novel lattice matched GaP / InP / Ge multi-junction solar cells with improved p++AlGaAs / n++ AlGaAs tunnel junction model are designed using the Synopsys / RSoft / version 2013. The optical and electrical characterizations of this cell are performed using the 2D Full WAVE and solar cell utility, resulting in an open circuit voltage of 2.82 V, short circuit current density of 16.939 mA/cm
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, fill factor of 85.117 % and power conversion efficiency of 40.66 %. To increase the short circuit current density and conversion efficiency further, InAs quantum dots of wide band gap energy are embedded within the middle cell, which absorbs the radiation in the range of (900-950) nm, thereby increasing the carrier generation. Under AM1.5G condition, simulation results of these quantum dot enhanced triple junction solar cell showed a 3.04 % increase in short circuit current density along with a drop of 1.17 % in open circuit voltage. Overall, it reported a power conversion efficiency of 41.29 % contributed by the quantum density of 169 QD/μm
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accounting an efficiency improvement of 1.53 %.