1 GHz microprocessor integration with high performance transistor and low RC delay

This paper describes the process that enabled the development of the world's first 1 GHz microprocessor that was implemented with 6-layer Al interconnections, low-k dielectrics as the interlayer materials to reduce RC delay, and high-performance transistors having L/sub eff/ of 0.1 /spl mu/m. These enhancements were the key in producing the 1 GHz 64-bit RISC microprocessor that operates at 1.9 V and 80/spl deg/C at which the junction temperature is measured at 135/spl deg/C.