Self-heating characterization for SOI MOSFET based on AC output conductance

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R/sub th/) and thermal capacitance (C/sub th/) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC I-V data in device modeling.