Cu Barrier Metal Slurry for Reducing Defect-Level and Enhancing Removal Performances

Chemical mechanical planarization (CMP) is an essential step to achieve global planarization by using both chemical reaction and mechanical abrasion, arising from the chemical additives and nano-particles in the slurry. Recently, as interconnect line sizes have approached and in some cases become smaller, the control of a defect level from corrosion or particle adsorption is very important for Cu barrier metal CMP process. To develop a low defect level Cu barrier slurry, an understanding of interaction between each slurry component and surface of film is key components. Here, we describe and discuss the formulation of the residue removal agent (RRA) with the removal enhancer (RE) that the SKC-SD-100 slurry shows highly improved defect levels and the removal performance of Cu and Oxide are also improved than SKC-SD-Rev.0 (W/O RRA and RE addition) slurry.